Field emission is a powerful technique to gain insight into the electronic properties of materials. A strong and ultrashort laser pulse can periodically modify the potential barrier for electron tunnelling, giving rise to photon sidebands in the far-field electron energy distribution. The aim of this work is to present a novel tight-binding approach that simulates the laser-assisted field emission from a metallic tip taking account also of the electronic features of the emitter. The outof-equilibrium electron dynamics of this inhomogeneous system is described using the Green's function formalism.
Tight-binding simulation of ultrafast pulse-assisted field emission from a metallic tip
D'Onofrio L. J.;Avella A.;Eckstein M.
2024-01-01
Abstract
Field emission is a powerful technique to gain insight into the electronic properties of materials. A strong and ultrashort laser pulse can periodically modify the potential barrier for electron tunnelling, giving rise to photon sidebands in the far-field electron energy distribution. The aim of this work is to present a novel tight-binding approach that simulates the laser-assisted field emission from a metallic tip taking account also of the electronic features of the emitter. The outof-equilibrium electron dynamics of this inhomogeneous system is described using the Green's function formalism.File in questo prodotto:
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