In this work we present to our knowledge the most precise measurement of the 7Be electron capture decay half-life in a host material. A silicon carbide sample with ~8.62 × 10^9 7Be atoms was measured for 83.5 d on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T1/2 = 53.284 ± 0.016 d, which corresponds to an uncertainty of 0.3‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life.
Precise measurement of the 7Be electron capture decay half-life in Silicon Carbide
Di Benedetto, Luigi;Carrano, Vincenzo;Neitzert, Heinrich-Christoph;Rubino, Alfredo
2025-01-01
Abstract
In this work we present to our knowledge the most precise measurement of the 7Be electron capture decay half-life in a host material. A silicon carbide sample with ~8.62 × 10^9 7Be atoms was measured for 83.5 d on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T1/2 = 53.284 ± 0.016 d, which corresponds to an uncertainty of 0.3‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.