Rinaldi, Nicola
 Distribuzione geografica
Continente #
AS - Asia 163
EU - Europa 130
NA - Nord America 122
SA - Sud America 27
AF - Africa 1
Totale 443
Nazione #
US - Stati Uniti d'America 114
SG - Singapore 81
IT - Italia 54
DE - Germania 32
CN - Cina 30
BR - Brasile 25
HK - Hong Kong 23
RU - Federazione Russa 17
VN - Vietnam 11
ES - Italia 5
GB - Regno Unito 5
MX - Messico 5
PL - Polonia 5
AT - Austria 4
IN - India 4
NL - Olanda 4
BD - Bangladesh 3
CA - Canada 2
FI - Finlandia 2
JP - Giappone 2
TR - Turchia 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
CH - Svizzera 1
DO - Repubblica Dominicana 1
IQ - Iraq 1
JO - Giordania 1
KR - Corea 1
KZ - Kazakistan 1
PS - Palestinian Territory 1
SA - Arabia Saudita 1
SE - Svezia 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 443
Città #
Singapore 34
Dallas 32
Hong Kong 23
Ashburn 14
Beijing 10
Naples 10
Fisciano 9
New York 9
Nuremberg 9
Salerno 9
Ho Chi Minh City 5
Los Angeles 5
Warsaw 5
Cagliari 4
Moscow 4
São Paulo 4
Denver 3
Phoenix 3
Santa Clara 3
Sarno 3
Vienna 3
Ankara 2
Brasília 2
Chennai 2
Columbus 2
Manchester 2
Mascalucia 2
Milan 2
Querétaro 2
Rio de Janeiro 2
San Valentino Torio 2
Tokyo 2
Vũng Tàu 2
Amman 1
Amsterdam 1
Augusta 1
Baghdad 1
Barra do Piraí 1
Barueri 1
Belo Horizonte 1
Bisceglie 1
Bismarck 1
Boston 1
Brooklyn 1
Camaçari 1
Chicago 1
City of London 1
Cleveland 1
Concord 1
Cuautitlán Izcalli 1
Dhaka 1
General Escobedo 1
Haiphong 1
Helsinki 1
Houston 1
Ipatinga 1
Johannesburg 1
Karnāl 1
Lappeenranta 1
Lehigh Acres 1
London 1
Miami 1
Montreal 1
Munich 1
Nova Friburgo 1
Olímpia 1
Oral 1
Orem 1
Paulista 1
Pinheiro 1
Poplar 1
Quảng Ngãi 1
Quận Một 1
Ramallah 1
Riyadh 1
Salvador 1
San Diego 1
San Jose 1
Santana de Parnaíba 1
Santiago de los Caballeros 1
Seoul 1
Somma Vesuviana 1
St Louis 1
Stockholm 1
Stockton 1
São José dos Campos 1
The Dalles 1
Três Marias 1
Tucuruí 1
Tân Phú Hai 1
Uberlândia 1
Ubá 1
Udaipur 1
Uruburetama 1
Villa Regina 1
Whitehall 1
Yubileyny 1
Totale 289
Nome #
A 4H-SiC CMOS SPICE Level 3 Model for Circuit Simulations 75
A 4H-SiC CMOS Oscillator-Based Temperature Sensor Operating from 298 K up to 573 K 66
Anomalous I-V Characteristics of 4H-SiC p-i-n Diode at Cryogenic Temperature 59
A 4H-SiC NMOSFET-Based Temperature Sensor Operating Between 14 K and 481 K 58
A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions 56
Design and Analysis of a Voltage Schmitt Trigger in 4H-SiC CMOS Technology 56
Performance and Understanding of 4H-SiC Electron Devices at Low Temperature Range 39
Analysis of a 4H-SiC Lateral PMOSFET Temperature Sensor Between 14 K–482 K 38
AC Analysis and Modeling of Graphene-Enriched WO₃–Pt Films for Hydrogen Sensing 9
Totale 456
Categoria #
all - tutte 1.858
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.858


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202429 0 0 4 0 0 1 9 3 1 4 5 2
2024/2025174 1 2 4 11 9 7 43 24 22 7 15 29
2025/2026253 21 26 47 62 78 19 0 0 0 0 0 0
Totale 456