GRILLO, Alessandro
 Distribuzione geografica
Continente #
NA - Nord America 2.859
AS - Asia 1.974
EU - Europa 1.131
SA - Sud America 303
Continente sconosciuto - Info sul continente non disponibili 197
AF - Africa 62
OC - Oceania 4
Totale 6.530
Nazione #
US - Stati Uniti d'America 2.720
HK - Hong Kong 634
SG - Singapore 566
IT - Italia 492
VN - Vietnam 246
CN - Cina 228
BR - Brasile 224
RU - Federazione Russa 209
CA - Canada 85
DE - Germania 75
GB - Regno Unito 69
IE - Irlanda 67
FR - Francia 63
KR - Corea 51
IN - India 43
TR - Turchia 42
FI - Finlandia 32
SE - Svezia 32
BD - Bangladesh 30
AR - Argentina 28
IQ - Iraq 27
PL - Polonia 23
MX - Messico 21
NL - Olanda 20
ZA - Sudafrica 20
ID - Indonesia 18
JP - Giappone 16
ES - Italia 15
CO - Colombia 13
MA - Marocco 11
EC - Ecuador 9
TW - Taiwan 9
UA - Ucraina 9
VE - Venezuela 9
UZ - Uzbekistan 8
CR - Costa Rica 7
PH - Filippine 7
PK - Pakistan 7
PY - Paraguay 7
GT - Guatemala 5
JM - Giamaica 5
KG - Kirghizistan 5
UY - Uruguay 5
AZ - Azerbaigian 4
CI - Costa d'Avorio 4
ET - Etiopia 4
IL - Israele 4
KE - Kenya 4
MY - Malesia 4
SA - Arabia Saudita 4
TT - Trinidad e Tobago 4
AL - Albania 3
AU - Australia 3
CH - Svizzera 3
DZ - Algeria 3
EG - Egitto 3
HU - Ungheria 3
JO - Giordania 3
LT - Lituania 3
PE - Perù 3
RS - Serbia 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
BE - Belgio 2
BZ - Belize 2
CL - Cile 2
CZ - Repubblica Ceca 2
GY - Guiana 2
HN - Honduras 2
IR - Iran 2
KW - Kuwait 2
LB - Libano 2
NG - Nigeria 2
SC - Seychelles 2
TN - Tunisia 2
AO - Angola 1
BF - Burkina Faso 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CG - Congo 1
CM - Camerun 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GE - Georgia 1
HT - Haiti 1
KH - Cambogia 1
KZ - Kazakistan 1
LV - Lettonia 1
MQ - Martinica 1
MU - Mauritius 1
MW - Malawi 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
OM - Oman 1
PA - Panama 1
PR - Porto Rico 1
Totale 6.327
Città #
Hong Kong 629
Dallas 356
Singapore 316
San Jose 304
Chandler 247
Ashburn 230
Milan 164
Princeton 155
Council Bluffs 104
Beijing 84
Salerno 78
Ho Chi Minh City 60
Dublin 58
Dong Ket 55
Los Angeles 53
New York 53
Ann Arbor 51
Hanoi 46
Lauterbourg 46
Santa Clara 45
Rome 43
Munich 41
Moscow 39
The Dalles 37
Wilmington 35
Andover 32
São Paulo 26
Fisciano 25
Montreal 25
Houston 24
Orem 24
Jacksonville 22
Izmir 21
Denver 19
Atlanta 18
Warsaw 18
Chicago 17
Turku 17
Manchester 16
Chennai 15
Figino 14
Johannesburg 14
Tokyo 14
Brooklyn 13
Fairfield 13
Naples 13
Columbus 12
London 12
Phoenix 12
Amsterdam 11
San Francisco 11
Sennori 11
Baghdad 10
Dearborn 10
Norwalk 10
Rio de Janeiro 10
Woodbridge 10
Frankfurt am Main 9
Guangzhou 9
Mexico City 9
Redwood City 9
Seattle 9
Toronto 9
Turin 9
Washington 9
Ankara 8
Boston 8
Lappeenranta 8
Nanjing 8
Queens 8
Stockholm 8
Tashkent 8
Da Nang 7
Hải Dương 7
Pune 7
San José 7
Buffalo 6
Edmonton 6
Haiphong 6
Poplar 6
San Nicola la Strada 6
Shenyang 6
Bishkek 5
Boardman 5
Bologna 5
Calgary 5
Casablanca 5
Dhaka 5
Jakarta 5
L’Aquila 5
Nanchang 5
Shanghai 5
Abidjan 4
Belo Horizonte 4
Biên Hòa 4
Bắc Ninh 4
Canary Wharf 4
Caxias do Sul 4
Charlotte 4
Erbil 4
Totale 4.122
Nome #
Gas dependent hysteresis in MoS2 field effect transistors 480
Field emission from mono and two-dimensional nanostructures 279
All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics 210
Electron field emission of water-based inkjet printed graphene films 204
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors 184
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 178
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 171
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 156
A Current–Voltage Model for Double Schottky Barrier Devices 154
Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides 140
Metal-semiconductor Schottky diode with Landauer’s formalism 138
Graphene Schottky Junction on Pillar Patterned Silicon Substrate 133
Field Emission from Graphene Layers 131
Effect of silicon doping on graphene/silicon Schottky photodiodes 129
Field Emission Characteristics of InSb Patterned Nanowires 125
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress 124
Graphene-Silicon Device for Visible and Infrared Photodetection 123
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 122
Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes 122
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 120
Observation of 2D conduction in ultrathin germanium arsenide field-effect transistors 119
Characterization of InSb nanopillars for field emission applications 119
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors 118
Field Emission Characterization of MoS2 Nanoflowers 117
Environmental effects on transport properties of PdSe2 field effect transistors 117
Electron irradiation on multilayer PdSe2 field effect transistors 114
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 111
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 109
MoS2 and WSe2 in field effect transistors 108
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 107
Contact resistance and mobility in back-gate graphene transistors 104
Field emission from two-dimensional GeAs 103
MoS2 transistors with ohmic or Schottky contacts 102
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 102
Electrical conduction and photoconduction in PtSe2 ultrathin films 102
Electron irradiation of metal contacts in monolayer MoS2 Field-Effect Transistors 98
Direct contacting of 2D nanosheets by metallic nanoprobes 89
Enhanced photodetection in carbon-based devices with MIS parallel structure 88
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors 87
Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors 85
PtSe2 phototransistors with negative photoconductivity 85
Germanium arsenide nanosheets applied as two-dimensional field emitters 85
Memory effects in black phosphorus field effect transistors 81
Vacuum Gauge from Ultrathin MoS2 Transistor 80
Space charge limited current and photoconductive effect in few-layer MoS2 77
Sensors based on multiwalled carbon nanotubes 77
High field-emission current density from β-Ga2O3 nanopillars 75
Impact of Impurities on the Electrical Conduction of Anisotropic Two-Dimensional Materials 66
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 64
Multiwalled Carbon Nanotubes Films for Sensing Purpose 62
Gate‐Controlled Field Emission Current from MoS2 Nanosheets 62
Two-dimensional effects in Fowler-Nordheim field emission from transition metal dichalcogenides 60
Etch and Print: Graphene-Based Diodes for Silicon Technology 58
Nanostructured materials for a new generation of electronic devices 36
Impedance spectroscopy characterization of inkjet-printed graphene/silicon Schottky diodes 31
Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures 9
Totale 6.530
Categoria #
all - tutte 24.705
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.705


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022307 0 0 0 28 28 7 6 9 35 24 36 134
2022/2023494 47 69 6 67 55 101 5 45 65 4 20 10
2023/2024245 21 28 15 18 26 39 17 3 2 12 9 55
2024/2025770 7 9 0 23 33 66 186 91 60 51 118 126
2025/20263.469 302 641 317 376 331 164 393 92 193 308 67 285
2026/2027786 252 112 170 252 0 0 0 0 0 0 0 0
Totale 6.530