UniSa - IRIS Institutional Research Information System

GRILLO, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 2.178
AS - Asia 1.919
EU - Europa 828
SA - Sud America 292
AF - Africa 58
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 2
Totale 5.280
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Nazione #
US - Stati Uniti d'America 2.118
HK - Hong Kong 619
SG - Singapore 552
VN - Vietnam 246
IT - Italia 225
BR - Brasile 218
CN - Cina 216
RU - Federazione Russa 206
DE - Germania 75
IE - Irlanda 67
FR - Francia 61
KR - Corea 49
GB - Regno Unito 44
TR - Turchia 42
IN - India 39
FI - Finlandia 32
SE - Svezia 32
CA - Canada 29
AR - Argentina 27
IQ - Iraq 27
BD - Bangladesh 26
PL - Polonia 22
MX - Messico 19
NL - Olanda 19
ZA - Sudafrica 19
ID - Indonesia 18
JP - Giappone 15
ES - Italia 14
CO - Colombia 11
MA - Marocco 11
EC - Ecuador 9
TW - Taiwan 9
UA - Ucraina 9
UZ - Uzbekistan 8
VE - Venezuela 8
PH - Filippine 7
PK - Pakistan 7
PY - Paraguay 7
KG - Kirghizistan 5
UY - Uruguay 5
AZ - Azerbaigian 4
CI - Costa d'Avorio 4
ET - Etiopia 4
KE - Kenya 4
MY - Malesia 4
SA - Arabia Saudita 4
CH - Svizzera 3
DZ - Algeria 3
EG - Egitto 3
JO - Giordania 3
LT - Lituania 3
PE - Perù 3
RS - Serbia 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AT - Austria 2
AU - Australia 2
BE - Belgio 2
CL - Cile 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
IR - Iran 2
KW - Kuwait 2
LB - Libano 2
NG - Nigeria 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
AO - Angola 1
BF - Burkina Faso 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CG - Congo 1
CM - Camerun 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GE - Georgia 1
GT - Guatemala 1
GY - Guiana 1
HN - Honduras 1
IL - Israele 1
JM - Giamaica 1
KH - Cambogia 1
KZ - Kazakistan 1
LV - Lettonia 1
MW - Malawi 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
OM - Oman 1
PA - Panama 1
PS - Palestinian Territory 1
RO - Romania 1
SI - Slovenia 1
SR - Suriname 1
TH - Thailandia 1
TJ - Tagikistan 1
TL - Timor Orientale 1
Totale 5.279
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Città #
Hong Kong 616
Dallas 333
Singapore 304
San Jose 262
Chandler 246
Ashburn 176
Princeton 155
Salerno 76
Beijing 74
Council Bluffs 64
Ho Chi Minh City 60
Dublin 58
Dong Ket 55
Ann Arbor 50
Hanoi 46
Lauterbourg 46
Munich 41
Los Angeles 40
Moscow 39
New York 37
The Dalles 37
Wilmington 35
Andover 32
Santa Clara 26
Fisciano 25
Houston 23
Izmir 21
Jacksonville 21
São Paulo 21
Orem 18
Turku 17
Warsaw 17
Montreal 16
Denver 13
Fairfield 13
Johannesburg 13
Tokyo 13
Manchester 12
Chennai 11
Columbus 11
Sennori 11
Amsterdam 10
Atlanta 10
Baghdad 10
Chicago 10
Dearborn 10
Norwalk 10
Rio de Janeiro 10
Woodbridge 10
Frankfurt am Main 9
Guangzhou 9
Redwood City 9
Ankara 8
Lappeenranta 8
Nanjing 8
Stockholm 8
Tashkent 8
Boston 7
Da Nang 7
Hải Dương 7
London 7
Mexico City 7
Pune 7
San Francisco 7
Brooklyn 6
Haiphong 6
Phoenix 6
Poplar 6
San Nicola la Strada 6
Seattle 6
Shenyang 6
Bishkek 5
Boardman 5
Casablanca 5
Dhaka 5
Jakarta 5
L’Aquila 5
Nanchang 5
Naples 5
Shanghai 5
Washington 5
Abidjan 4
Belo Horizonte 4
Biên Hòa 4
Buffalo 4
Bắc Ninh 4
Calgary 4
Caxias do Sul 4
Erbil 4
Gaithersburg 4
Helsinki 4
Hsinchu 4
Nairobi 4
Pescara 4
Riverside 4
Salvador 4
Seoul 4
Taipei 4
Toronto 4
Baku 3
Totale 3.547
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Nome #
Gas dependent hysteresis in MoS2 field effect transistors 467
All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics 187
Electron field emission of water-based inkjet printed graphene films 174
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 161
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors 160
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 156
A Current–Voltage Model for Double Schottky Barrier Devices 136
Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides 129
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 129
Graphene Schottky Junction on Pillar Patterned Silicon Substrate 122
Field Emission from Graphene Layers 113
Effect of silicon doping on graphene/silicon Schottky photodiodes 113
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress 110
Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes 109
Observation of 2D conduction in ultrathin germanium arsenide field-effect transistors 108
Characterization of InSb nanopillars for field emission applications 107
Field Emission Characterization of MoS2 Nanoflowers 105
Electron irradiation on multilayer PdSe2 field effect transistors 103
Field emission from mono and two-dimensional nanostructures 102
Environmental effects on transport properties of PdSe2 field effect transistors 102
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 101
Graphene-Silicon Device for Visible and Infrared Photodetection 101
Metal-semiconductor Schottky diode with Landauer’s formalism 100
Contact resistance and mobility in back-gate graphene transistors 97
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 97
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors 96
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 96
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 94
Field emission from two-dimensional GeAs 93
MoS2 and WSe2 in field effect transistors 92
Field Emission Characteristics of InSb Patterned Nanowires 92
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 89
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 89
Electrical conduction and photoconduction in PtSe2 ultrathin films 89
Direct contacting of 2D nanosheets by metallic nanoprobes 85
Electron irradiation of metal contacts in monolayer MoS2 Field-Effect Transistors 84
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors 81
Germanium arsenide nanosheets applied as two-dimensional field emitters 77
Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors 75
MoS2 transistors with ohmic or Schottky contacts 74
Enhanced photodetection in carbon-based devices with MIS parallel structure 72
PtSe2 phototransistors with negative photoconductivity 72
Memory effects in black phosphorus field effect transistors 72
Vacuum Gauge from Ultrathin MoS2 Transistor 61
Space charge limited current and photoconductive effect in few-layer MoS2 60
High field-emission current density from β-Ga2O3 nanopillars 59
Sensors based on multiwalled carbon nanotubes 59
Gate‐Controlled Field Emission Current from MoS2 Nanosheets 55
Multiwalled Carbon Nanotubes Films for Sensing Purpose 54
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 54
Etch and Print: Graphene-Based Diodes for Silicon Technology 51
Two-dimensional effects in Fowler-Nordheim field emission from transition metal dichalcogenides 50
Impact of Impurities on the Electrical Conduction of Anisotropic Two-Dimensional Materials 44
Impedance spectroscopy characterization of inkjet-printed graphene/silicon Schottky diodes 14
Nanostructured materials for a new generation of electronic devices 1
Totale 5.473
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Categoria #
all - tutte 21.324
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.324
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202161 0 0 0 0 0 0 0 0 0 0 0 61
2021/2022318 1 10 0 28 28 7 6 9 35 24 36 134
2022/2023494 47 69 6 67 55 101 5 45 65 4 20 10
2023/2024245 21 28 15 18 26 39 17 3 2 12 9 55
2024/2025770 7 9 0 23 33 66 186 91 60 51 118 126
2025/20263.198 302 641 317 376 331 164 393 92 193 308 67 14
Totale 5.473