UniSa - IRIS Institutional Research Information System

GRILLO, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 2.459
AS - Asia 1.960
EU - Europa 1.086
SA - Sud America 297
Continente sconosciuto - Info sul continente non disponibili 195
AF - Africa 59
OC - Oceania 4
Totale 6.060
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Nazione #
US - Stati Uniti d'America 2.376
HK - Hong Kong 631
SG - Singapore 564
IT - Italia 471
VN - Vietnam 246
CN - Cina 226
BR - Brasile 220
RU - Federazione Russa 206
DE - Germania 75
IE - Irlanda 67
FR - Francia 61
GB - Regno Unito 54
KR - Corea 49
IN - India 43
CA - Canada 42
TR - Turchia 42
FI - Finlandia 32
SE - Svezia 32
BD - Bangladesh 29
AR - Argentina 27
IQ - Iraq 27
PL - Polonia 22
MX - Messico 21
NL - Olanda 20
ZA - Sudafrica 19
ID - Indonesia 18
ES - Italia 15
JP - Giappone 15
CO - Colombia 13
MA - Marocco 11
EC - Ecuador 9
TW - Taiwan 9
UA - Ucraina 9
VE - Venezuela 9
UZ - Uzbekistan 8
PH - Filippine 7
PK - Pakistan 7
PY - Paraguay 7
KG - Kirghizistan 5
UY - Uruguay 5
AZ - Azerbaigian 4
CI - Costa d'Avorio 4
ET - Etiopia 4
JM - Giamaica 4
KE - Kenya 4
MY - Malesia 4
SA - Arabia Saudita 4
TT - Trinidad e Tobago 4
AU - Australia 3
CH - Svizzera 3
DZ - Algeria 3
EG - Egitto 3
GT - Guatemala 3
JO - Giordania 3
LT - Lituania 3
PE - Perù 3
RS - Serbia 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
AT - Austria 2
BE - Belgio 2
CL - Cile 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
IR - Iran 2
KW - Kuwait 2
LB - Libano 2
NG - Nigeria 2
TN - Tunisia 2
AO - Angola 1
BF - Burkina Faso 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CG - Congo 1
CM - Camerun 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GE - Georgia 1
GY - Guiana 1
HN - Honduras 1
IL - Israele 1
KH - Cambogia 1
KZ - Kazakistan 1
LV - Lettonia 1
MW - Malawi 1
NC - Nuova Caledonia 1
NI - Nicaragua 1
OM - Oman 1
PA - Panama 1
PR - Porto Rico 1
PS - Palestinian Territory 1
RO - Romania 1
SC - Seychelles 1
SI - Slovenia 1
SR - Suriname 1
TH - Thailandia 1
Totale 5.864
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Città #
Hong Kong 627
Dallas 349
Singapore 314
San Jose 263
Chandler 247
Ashburn 194
Milan 162
Princeton 155
Beijing 83
Salerno 78
Council Bluffs 75
Ho Chi Minh City 60
Dublin 58
Dong Ket 55
Ann Arbor 50
New York 48
Hanoi 46
Lauterbourg 46
Los Angeles 45
Munich 41
Rome 41
Moscow 39
The Dalles 37
Wilmington 35
Andover 32
Santa Clara 31
Fisciano 25
Orem 24
Houston 23
São Paulo 23
Jacksonville 22
Izmir 21
Montreal 19
Turku 17
Warsaw 17
Atlanta 16
Denver 16
Chennai 15
Manchester 15
Chicago 14
Figino 14
Fairfield 13
Johannesburg 13
Tokyo 13
Columbus 12
Amsterdam 11
San Francisco 11
Sennori 11
Baghdad 10
Dearborn 10
London 10
Norwalk 10
Rio de Janeiro 10
Woodbridge 10
Brooklyn 9
Frankfurt am Main 9
Guangzhou 9
Mexico City 9
Redwood City 9
Seattle 9
Turin 9
Ankara 8
Lappeenranta 8
Nanjing 8
Naples 8
Phoenix 8
Stockholm 8
Tashkent 8
Boston 7
Da Nang 7
Hải Dương 7
Pune 7
Washington 7
Haiphong 6
Poplar 6
San Nicola la Strada 6
Shenyang 6
Bishkek 5
Boardman 5
Buffalo 5
Casablanca 5
Dhaka 5
Jakarta 5
L’Aquila 5
Nanchang 5
Shanghai 5
Abidjan 4
Belo Horizonte 4
Biên Hòa 4
Bắc Ninh 4
Calgary 4
Canary Wharf 4
Caxias do Sul 4
Erbil 4
Gaithersburg 4
Helsinki 4
Hsinchu 4
Kingston 4
Miami 4
Minneapolis 4
Totale 3.915
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Nome #
Gas dependent hysteresis in MoS2 field effect transistors 473
Field emission from mono and two-dimensional nanostructures 274
All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics 203
Electron field emission of water-based inkjet printed graphene films 194
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors 170
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 169
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 163
A Current–Voltage Model for Double Schottky Barrier Devices 143
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 138
Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides 133
Graphene Schottky Junction on Pillar Patterned Silicon Substrate 128
Effect of silicon doping on graphene/silicon Schottky photodiodes 122
Field Emission from Graphene Layers 121
Field Emission Characteristics of InSb Patterned Nanowires 117
Bias Tunable Photocurrent in Metal-Insulator-Semiconductor Heterostructures with Photoresponse Enhanced by Carbon Nanotubes 116
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress 115
Characterization of InSb nanopillars for field emission applications 114
Graphene-Silicon Device for Visible and Infrared Photodetection 114
Metal-semiconductor Schottky diode with Landauer’s formalism 113
Field Emission Characterization of MoS2 Nanoflowers 113
Observation of 2D conduction in ultrathin germanium arsenide field-effect transistors 112
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors 111
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 109
Environmental effects on transport properties of PdSe2 field effect transistors 109
Electron irradiation on multilayer PdSe2 field effect transistors 108
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 105
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 103
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 101
MoS2 and WSe2 in field effect transistors 101
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 99
Contact resistance and mobility in back-gate graphene transistors 98
Field emission from two-dimensional GeAs 98
Electrical conduction and photoconduction in PtSe2 ultrathin films 98
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 95
Electron irradiation of metal contacts in monolayer MoS2 Field-Effect Transistors 91
Direct contacting of 2D nanosheets by metallic nanoprobes 86
Enhanced photodetection in carbon-based devices with MIS parallel structure 82
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors 82
MoS2 transistors with ohmic or Schottky contacts 80
Germanium arsenide nanosheets applied as two-dimensional field emitters 80
Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors 78
PtSe2 phototransistors with negative photoconductivity 77
Memory effects in black phosphorus field effect transistors 73
Space charge limited current and photoconductive effect in few-layer MoS2 71
High field-emission current density from β-Ga2O3 nanopillars 69
Sensors based on multiwalled carbon nanotubes 68
Vacuum Gauge from Ultrathin MoS2 Transistor 66
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 60
Multiwalled Carbon Nanotubes Films for Sensing Purpose 57
Impact of Impurities on the Electrical Conduction of Anisotropic Two-Dimensional Materials 56
Gate‐Controlled Field Emission Current from MoS2 Nanosheets 56
Two-dimensional effects in Fowler-Nordheim field emission from transition metal dichalcogenides 55
Etch and Print: Graphene-Based Diodes for Silicon Technology 51
Impedance spectroscopy characterization of inkjet-printed graphene/silicon Schottky diodes 24
Nanostructured materials for a new generation of electronic devices 18
Totale 6.060
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Categoria #
all - tutte 23.025
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.025
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022317 0 10 0 28 28 7 6 9 35 24 36 134
2022/2023494 47 69 6 67 55 101 5 45 65 4 20 10
2023/2024245 21 28 15 18 26 39 17 3 2 12 9 55
2024/2025770 7 9 0 23 33 66 186 91 60 51 118 126
2025/20263.469 302 641 317 376 331 164 393 92 193 308 67 285
2026/2027316 252 64 0 0 0 0 0 0 0 0 0 0
Totale 6.060