UniSa - IRIS Institutional Research Information System

Intonti, Kimberly
 Distribuzione geografica
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Continente #
AS - Asia 6.102
NA - Nord America 644
EU - Europa 589
SA - Sud America 175
AF - Africa 17
Totale 7.527
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Nazione #
HK - Hong Kong 5.531
US - Stati Uniti d'America 617
SG - Singapore 308
IT - Italia 263
RU - Federazione Russa 163
BR - Brasile 145
CN - Cina 103
VN - Vietnam 81
GB - Regno Unito 29
DE - Germania 28
NL - Olanda 24
FI - Finlandia 19
IN - India 19
CA - Canada 16
ES - Italia 14
PL - Polonia 14
AR - Argentina 11
JP - Giappone 11
KR - Corea 10
BD - Bangladesh 9
AT - Austria 7
FR - Francia 7
IQ - Iraq 7
SE - Svezia 7
VE - Venezuela 6
ID - Indonesia 5
JO - Giordania 5
MX - Messico 5
EC - Ecuador 4
KE - Kenya 4
PY - Paraguay 4
UA - Ucraina 4
IE - Irlanda 3
LT - Lituania 3
TR - Turchia 3
UY - Uruguay 3
ZA - Sudafrica 3
AZ - Azerbaigian 2
DK - Danimarca 2
DZ - Algeria 2
MA - Marocco 2
NG - Nigeria 2
SA - Arabia Saudita 2
AD - Andorra 1
AE - Emirati Arabi Uniti 1
AO - Angola 1
BS - Bahamas 1
CD - Congo 1
CO - Colombia 1
CZ - Repubblica Ceca 1
ET - Etiopia 1
GA - Gabon 1
GD - Grenada 1
HN - Honduras 1
IL - Israele 1
JM - Giamaica 1
KG - Kirghizistan 1
LC - Santa Lucia 1
NP - Nepal 1
PE - Perù 1
PK - Pakistan 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 7.527
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Città #
Hong Kong 5.524
Dallas 288
Singapore 171
Ashburn 60
Fisciano 42
Salerno 38
Moscow 36
Los Angeles 28
Ho Chi Minh City 22
Naples 21
New York 20
Beijing 18
Munich 18
Hanoi 17
São Paulo 16
Turku 14
Sarno 13
Warsaw 13
The Dalles 11
Denver 10
Tokyo 10
Amsterdam 9
Manchester 8
Orem 8
Seoul 8
Domicella 7
Montreal 7
Ancona 6
Brooklyn 6
Chandler 6
Nuremberg 6
Rome 6
San Nicola la Strada 6
Alcobendas 5
Amman 5
Atlanta 5
Biên Hòa 5
Boardman 5
Chennai 5
Poplar 5
Stockholm 5
Bari 4
Campinas 4
Curitiba 4
Haiphong 4
Houston 4
Lappeenranta 4
Mugnano di Napoli 4
New Delhi 4
Nice 4
Phoenix 4
San Francisco 4
Santa Clara 4
Slough 4
Vienna 4
West Jordan 4
Barnstaple 3
Belo Horizonte 3
Buenos Aires 3
Buffalo 3
Carora 3
Da Nang 3
Gragnano 3
Hải Dương 3
Mexico City 3
Milan 3
Nairobi 3
Ninh Bình 3
Palermo 3
Pavia 3
Pisa 3
Princeton 3
Ribeirão Preto 3
Rio de Janeiro 3
Salamanca 3
Salvador 3
Seattle 3
Somma Vesuviana 3
Thái Bình 3
Toronto 3
Vancouver 3
Wan Chai 3
Washington 3
Argenteuil 2
Baghdad 2
Baku 2
Baronissi 2
Boston 2
Brasília 2
Canoas 2
Castel San Giorgio 2
Castellammare di Stabia 2
Cava de' Tirreni 2
Charlotte 2
Chicago 2
City of London 2
Columbus 2
Ercolano 2
Extrema 2
Frankfurt am Main 2
Totale 6.688
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Nome #
Role of interface and bulk traps on the capacitance–voltage characteristics of WS2/Al2O3/Si capacitors 1.144
Ambipolar conduction in gated tungsten disulphide nanotube 992
Temperature Dependent Black Phosphorus Transistor and Memory 832
The Second Quantum Revolution: Unexplored Facts and Latest News 492
Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure 453
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications 321
Multilayer WS2 for low-power visible and near-infrared phototransistors 315
Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters 282
Zinc oxide tetrapods as novel field emitters with low turn-on voltage 243
Two-Dimensional MoS2 Logic Inverter 242
Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors 234
n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory 181
Memory Effect and Coexistence of Negative and Positive Photoconductivity in Black Phosphorus Field Effect Transistor for Neuromorphic Vision Sensors 152
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light 151
Gate-Driven Bi-Directional Photoresponse in MoTe2 Based Field Effect Transistors 128
InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications 126
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures 116
Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures 111
Single WS2 Nanotube-Based Field Effect Transistor: Ambipolar Conduction and Self-Powered Photodetection 110
Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts 104
Flexible Cold Cathodes Based on Graphite Nanoplatelet Coatings on Silicone Rubber 94
Black phosphorus unipolar transistor, memory, and photodetector 93
Metal-semiconductor Schottky diode with Landauer’s formalism 82
Optoelectronic memory in 2D MoS2 field effect transistor 74
n-type GaSe thin flake for optoelectronic devices 65
Effect of PMMA capping layer on black phosphorus field effect transistor 62
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2 59
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature 58
Temperature-dependent photoconductivity in two-dimensional MoS2 transistors 54
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor 53
Hierarchical WSe2 Nanoflowers for Efficient Field Emission 53
Pressure-dependent photoconductivity in two dimensional ReS₂ 41
Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory 39
ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode 37
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS2 field-effect transistor 34
Oxidation-driven structural, chemical and electrical transformation in ZrSe2 11
Ambipolar to anti-ambipolar light induced transition in WSe 2 -based FETs 8
Totale 7.646
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Categoria #
all - tutte 14.249
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.249
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202212 0 0 0 0 0 0 0 0 0 0 0 12
2022/202367 0 2 1 3 1 4 10 22 8 8 2 6
2023/2024214 10 18 18 16 20 33 14 7 6 17 32 23
2024/2025560 16 15 13 20 14 79 165 30 40 29 58 81
2025/20266.793 2.325 2.344 1.393 340 273 118 0 0 0 0 0 0
Totale 7.646