UniSa - IRIS Institutional Research Information System

Faella, Enver
 Distribuzione geografica
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Continente #
AS - Asia 3.970
NA - Nord America 2.345
EU - Europa 983
SA - Sud America 297
AF - Africa 60
Totale 7.655
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Nazione #
HK - Hong Kong 2.651
US - Stati Uniti d'America 2.276
SG - Singapore 567
IT - Italia 352
BR - Brasile 235
RU - Federazione Russa 231
VN - Vietnam 217
CN - Cina 208
IN - India 87
FR - Francia 71
DE - Germania 69
GB - Regno Unito 51
IE - Irlanda 43
CA - Canada 38
KR - Corea 37
BD - Bangladesh 36
IQ - Iraq 30
FI - Finlandia 29
SE - Svezia 29
AR - Argentina 27
NL - Olanda 27
TR - Turchia 24
JP - Giappone 23
PL - Polonia 22
ES - Italia 18
MX - Messico 17
ID - Indonesia 15
ZA - Sudafrica 15
MA - Marocco 11
UZ - Uzbekistan 10
JO - Giordania 9
UA - Ucraina 9
VE - Venezuela 9
CO - Colombia 8
PH - Filippine 8
AT - Austria 7
TW - Taiwan 7
EC - Ecuador 6
SA - Arabia Saudita 6
DZ - Algeria 5
ET - Etiopia 5
PY - Paraguay 5
AE - Emirati Arabi Uniti 4
CI - Costa d'Avorio 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GR - Grecia 4
IR - Iran 4
KE - Kenya 4
KG - Kirghizistan 4
PK - Pakistan 4
AZ - Azerbaigian 3
BE - Belgio 3
HN - Honduras 3
JM - Giamaica 3
LT - Lituania 3
BY - Bielorussia 2
CL - Cile 2
CR - Costa Rica 2
DK - Danimarca 2
GE - Georgia 2
GT - Guatemala 2
HU - Ungheria 2
LB - Libano 2
NG - Nigeria 2
NP - Nepal 2
PS - Palestinian Territory 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AM - Armenia 1
BF - Burkina Faso 1
BG - Bulgaria 1
BN - Brunei Darussalam 1
CD - Congo 1
CM - Camerun 1
GA - Gabon 1
GY - Guiana 1
KW - Kuwait 1
LR - Liberia 1
LY - Libia 1
ML - Mali 1
MW - Malawi 1
NI - Nicaragua 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PT - Portogallo 1
RO - Romania 1
SR - Suriname 1
TH - Thailandia 1
Totale 7.655
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Città #
Hong Kong 2.649
Dallas 713
San Jose 320
Singapore 313
Ashburn 186
Chandler 153
Princeton 71
Council Bluffs 64
Ho Chi Minh City 63
New York 57
Los Angeles 54
Salerno 53
Beijing 52
Lauterbourg 51
The Dalles 49
Hanoi 46
Fisciano 44
Moscow 44
Munich 40
São Paulo 35
Dublin 30
Santa Clara 27
Dong Ket 19
Warsaw 19
Ann Arbor 18
L’Aquila 18
Montreal 18
Tokyo 18
Turku 17
Naples 16
Amsterdam 15
Baronissi 14
Denver 14
Stockholm 14
Atlanta 13
Frankfurt am Main 13
Sarno 13
Poplar 12
Baghdad 11
Da Nang 11
Milan 11
Orem 11
Rome 11
Sennori 11
Wilmington 11
Johannesburg 10
Pune 10
Columbus 9
Haiphong 9
Manchester 9
Tashkent 9
Washington 9
New Delhi 8
San Marcellino 8
Seoul 8
Amman 7
Andover 7
Ankara 7
Belo Horizonte 7
Brooklyn 7
Chennai 7
Domicella 7
Hải Dương 7
Lappeenranta 7
San Francisco 7
Seattle 7
Ancona 6
Buenos Aires 6
Curitiba 6
London 6
Mexico City 6
Noida 6
Pescara 6
Rio de Janeiro 6
Toronto 6
Boardman 5
Boston 5
Buffalo 5
Chicago 5
Guangzhou 5
Houston 5
Montesilvano Marina 5
Norwalk 5
Shanghai 5
Woodbridge 5
Abidjan 4
Barcelona 4
Bishkek 4
Cambridge 4
Caracas 4
Casablanca 4
Caxias do Sul 4
Charlotte 4
Dhaka 4
Hefei 4
Honolulu 4
Istanbul 4
Mercato San Severino 4
Mumbai 4
Nice 4
Totale 5.772
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Nome #
Temperature Dependent Black Phosphorus Transistor and Memory 852
Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure 478
Neuromorphic Photoresponse in Ultrathin SnS2-Based Field Effect Transistor 345
Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters 309
Zinc oxide tetrapods as novel field emitters with low turn-on voltage 269
Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors 247
Ultrathin SnS2 Field‐Effect Transistors Exhibiting Temperature‐Enhanced Memory Performance 224
Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions 199
3D porous laser-induced graphene coated sponges for field emission devices and temperature/pressure sensors 194
Gate-Tunable Photoresponse in SnSe2 Field Effect Transistors 184
Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light 180
Electron field emission of water-based inkjet printed graphene films 174
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 161
Alpha Spectrometry of Radon Short-Lived Progeny in Drinking Water and Assessment of the Public Eective Dose: Results from the Cilento Area, Province of Salerno, Southern Italy 160
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 156
InAs nanowire field-effect transistors: temperature dependence of electrical properties and digital electronic applications 146
Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts 130
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures 129
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 129
Flexible Cold Cathodes Based on Graphite Nanoplatelet Coatings on Silicone Rubber 117
Black phosphorus unipolar transistor, memory, and photodetector 115
Field Emission from Graphene Layers 113
Characterization of InSb nanopillars for field emission applications 107
Easy Fabrication of Performant SWCNT-Si Photodetector 103
Optoelectronic memory in 2D MoS2 field effect transistor 102
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 101
Graphene-Silicon Device for Visible and Infrared Photodetection 101
SnO 2 Nanofibers Network for Cold Cathode Applications in Vacuum Nanoelectronics 98
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 97
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 96
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 94
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 89
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 89
Electrical conduction and photoconduction in PtSe2 ultrathin films 89
Effect of PMMA capping layer on black phosphorus field effect transistor 86
Direct contacting of 2D nanosheets by metallic nanoprobes 85
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature 81
Germanium arsenide nanosheets applied as two-dimensional field emitters 77
Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2 76
Hierarchical WSe2 Nanoflowers for Efficient Field Emission 73
Enhanced photodetection in carbon-based devices with MIS parallel structure 72
Graphene–WS2 Nanotube Film for Photodetection 72
PtSe2 phototransistors with negative photoconductivity 72
Memory effects in black phosphorus field effect transistors 72
Temperature-dependent photoconductivity in two-dimensional MoS2 transistors 70
Suppression of the Photogating Effect at High Temperatures in SnSe2-based Field-Effect Transistors 68
Light effects on graphene/tungsten disulfide nanotubes/graphene heterostructure 67
Vacuum Gauge from Ultrathin MoS2 Transistor 61
Manipulation of the electrical and memory device properties of monolayer MoS2 field-effect transistors by highly charged ion irradiation 60
Sensors based on multiwalled carbon nanotubes 59
Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation 57
Temperature Dependence of Electrical Resistance in Graphite Films Deposited on Glass and Low-Density Polyethylene by Spray Technology 56
Temperature-induced step-like enhancement of drain current in a two-dimensional ReS2 field-effect transistor 54
Multiwalled Carbon Nanotubes Films for Sensing Purpose 54
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 54
Pressure-dependent photoconductivity in two dimensional ReS₂ 53
Conduction and Photoconduction Mechanisms in Two-Dimensional SnS2 Field-Effect Transistor 52
Local Characterization of Field Emission Properties of Graphene Flowers 48
Synaptic Behavior in SnSe2 Field‐Effect Transistors Induced by Surface Oxide and Trap Dynamics 30
Persistent polarization effects and memory properties in ionic-liquid gated InAs nanowire transistors 29
Totale 7.815
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Categoria #
all - tutte 22.104
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.104
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202121 0 0 0 0 0 0 0 0 0 0 0 21
2021/2022173 1 10 0 32 19 6 11 4 6 2 15 67
2022/2023382 23 41 6 49 41 64 17 53 54 11 14 9
2023/2024323 18 36 20 23 34 68 28 11 3 13 22 47
2024/2025823 5 16 14 32 30 80 224 53 77 52 95 145
2025/20266.039 826 1.767 1.072 425 395 279 422 108 288 315 114 28
Totale 7.815