UniSa - IRIS Institutional Research Information System

Pelella, Aniello
 Distribuzione geografica
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Continente #
NA - Nord America 578
EU - Europa 207
AS - Asia 80
AF - Africa 5
Totale 870
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Nazione #
US - Stati Uniti d'America 577
IT - Italia 113
IE - Irlanda 43
CN - Cina 39
VN - Vietnam 20
SE - Svezia 12
DE - Germania 11
GB - Regno Unito 9
IN - India 8
FI - Finlandia 6
TR - Turchia 5
FR - Francia 4
TW - Taiwan 4
CZ - Repubblica Ceca 2
DZ - Algeria 2
ET - Etiopia 2
HU - Ungheria 2
JP - Giappone 2
KR - Corea 2
UA - Ucraina 2
BE - Belgio 1
CA - Canada 1
MA - Marocco 1
PL - Polonia 1
RO - Romania 1
Totale 870
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Città #
Chandler 185
Princeton 88
Ashburn 48
Dublin 36
Salerno 23
Dong Ket 20
Fisciano 20
Wilmington 19
Beijing 18
Andover 15
Ann Arbor 14
Sennori 11
Pune 8
Fairfield 7
Los Angeles 6
Norwalk 6
Washington 6
Woodbridge 6
Izmir 5
Lappeenranta 5
Redwood City 5
Mercato San Severino 4
Nanchang 4
Naples 4
Taipei 4
Barnstaple 3
Benevento 3
Boardman 3
Castellammare di Stabia 3
Houston 3
Pisa 3
Seattle 3
Somma Vesuviana 3
Cambridge 2
Caserta 2
Harar 2
Jacksonville 2
Nocera Inferiore 2
Nocera Superiore 2
Oceanside 2
Okehampton 2
Pomigliano d'Arco 2
Sidi Bel Abbes 2
West Jordan 2
Zlín 2
Acerra 1
Aradeo 1
Atlanta 1
Bastogne 1
Bend 1
Calgary 1
Casablanca 1
Catania 1
Exeter 1
Florence 1
Frankfurt am Main 1
Fuzhou 1
Guangzhou 1
Guyton 1
Hangzhou 1
Kuopio 1
London 1
Manchester 1
Munich 1
Nanjing 1
Portici 1
Retford 1
Rockville 1
San Diego 1
San Gennaro Vesuviano 1
Shenyang 1
Shenzhen 1
Stockholm 1
Strasbourg 1
Three Springs 1
Tokyo 1
Wakasato 1
Warsaw 1
Totale 648
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Nome #
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 56
Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides 49
Field Emission Characterization of MoS2 Nanoflowers 40
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 39
Graphene-Silicon Device for Visible and Infrared Photodetection 39
Characterization of InSb nanopillars for field emission applications 36
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 36
Field Emission from Graphene Layers 35
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress 35
SnO 2 Nanofibers Network for Cold Cathode Applications in Vacuum Nanoelectronics 35
Black phosphorus unipolar transistor, memory, and photodetector 32
Field Emission Characteristics of InSb Patterned Nanowires 32
Electron irradiation on multilayer PdSe2 field effect transistors 30
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors 29
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 29
Germanium arsenide nanosheets applied as two-dimensional field emitters 29
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 28
Memory effects in black phosphorus field effect transistors 25
Multiwalled Carbon Nanotubes Films for Sensing Purpose 23
Electron irradiation of metal contacts in monolayer MoS2 Field-Effect Transistors 23
PtSe2 phototransistors with negative photoconductivity 23
Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts 22
Direct contacting of 2D nanosheets by metallic nanoprobes 22
Vacuum Gauge from Ultrathin MoS2 Transistor 22
Sensors based on multiwalled carbon nanotubes 21
Gate‐Controlled Field Emission Current from MoS2 Nanosheets 18
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 17
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 17
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 14
Optoelectronic memory in 2D MoS2 field effect transistor 12
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 12
Electrical conduction and photoconduction in PtSe2 ultrathin films 12
Temperature Dependent Black Phosphorus Transistor and Memory 11
Etch and Print: Graphene-Based Diodes for Silicon Technology 11
Local Characterization of Field Emission Properties of Graphene Flowers 9
Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory 8
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures 8
Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector 7
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature 7
n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory 6
Multilayer WS2 for low-power visible and near-infrared phototransistors 6
Temperature Dependence of Electrical Resistance in Graphite Films Deposited on Glass and Low-Density Polyethylene by Spray Technology 5
Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation 5
Effect of PMMA capping layer on black phosphorus field effect transistor 5
Manipulation of the electrical and memory device properties of monolayer MoS2 field-effect transistors by highly charged ion irradiation 4
Enhanced photodetection in carbon-based devices with MIS parallel structure 4
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor 2
Memory Effect and Coexistence of Negative and Positive Photoconductivity in Black Phosphorus Field Effect Transistor for Neuromorphic Vision Sensors 2
Totale 992
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Categoria #
all - tutte 5.107
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.107
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201911 0 0 0 0 0 0 0 0 0 0 10 1
2019/202020 3 0 0 0 1 0 1 1 0 0 5 9
2020/2021114 6 28 10 5 3 4 3 11 3 5 14 22
2021/2022186 1 10 0 26 18 7 6 6 14 8 20 70
2022/2023427 29 50 4 55 48 72 15 62 59 12 17 4
2023/2024234 16 29 15 16 32 63 25 11 7 17 3 0
Totale 992