UniSa - IRIS Institutional Research Information System

Pelella, Aniello
 Distribuzione geografica
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Continente #
AS - Asia 5.537
NA - Nord America 2.884
EU - Europa 1.551
SA - Sud America 369
Continente sconosciuto - Info sul continente non disponibili 251
AF - Africa 67
OC - Oceania 1
Totale 10.660
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Nazione #
HK - Hong Kong 3.832
US - Stati Uniti d'America 2.792
IT - Italia 813
SG - Singapore 737
CN - Cina 287
BR - Brasile 276
VN - Vietnam 269
RU - Federazione Russa 262
BD - Bangladesh 95
DE - Germania 84
FR - Francia 79
IN - India 79
GB - Regno Unito 58
CA - Canada 48
IE - Irlanda 47
FI - Finlandia 44
NL - Olanda 44
KR - Corea 39
IQ - Iraq 36
AR - Argentina 34
TR - Turchia 30
PL - Polonia 27
ES - Italia 26
JP - Giappone 24
SE - Svezia 23
MX - Messico 21
ID - Indonesia 19
VE - Venezuela 16
ZA - Sudafrica 16
CO - Colombia 13
PK - Pakistan 12
PY - Paraguay 12
UA - Ucraina 11
JO - Giordania 10
KE - Kenya 10
MA - Marocco 10
UZ - Uzbekistan 10
AT - Austria 9
EC - Ecuador 8
PH - Filippine 8
SA - Arabia Saudita 7
LT - Lituania 6
DZ - Algeria 5
ET - Etiopia 5
JM - Giamaica 5
TW - Taiwan 5
AZ - Azerbaigian 4
CI - Costa d'Avorio 4
EG - Egitto 4
KG - Kirghizistan 4
LB - Libano 4
MY - Malesia 4
TT - Trinidad e Tobago 4
AE - Emirati Arabi Uniti 3
BE - Belgio 3
IL - Israele 3
NG - Nigeria 3
PE - Perù 3
AL - Albania 2
AO - Angola 2
CL - Cile 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
GA - Gabon 2
GR - Grecia 2
GT - Guatemala 2
GY - Guiana 2
HN - Honduras 2
HU - Ungheria 2
KW - Kuwait 2
NP - Nepal 2
PS - Palestinian Territory 2
RS - Serbia 2
TN - Tunisia 2
UY - Uruguay 2
AD - Andorra 1
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AU - Australia 1
BF - Burkina Faso 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CD - Congo 1
CM - Camerun 1
CU - Cuba 1
CW - ???statistics.table.value.countryCode.CW??? 1
GD - Grenada 1
GE - Georgia 1
GI - Gibilterra 1
IR - Iran 1
KH - Cambogia 1
KZ - Kazakistan 1
LC - Santa Lucia 1
LK - Sri Lanka 1
MW - Malawi 1
NI - Nicaragua 1
OM - Oman 1
PA - Panama 1
PR - Porto Rico 1
Totale 10.406
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Città #
Hong Kong 3.823
Dallas 664
Singapore 410
San Jose 380
Milan 248
Ashburn 241
Chandler 185
Princeton 92
Council Bluffs 89
Beijing 84
Salerno 82
Ho Chi Minh City 77
Rome 74
New York 73
Lauterbourg 64
Los Angeles 64
Hanoi 57
The Dalles 55
Moscow 49
Fisciano 48
Santa Clara 46
Munich 42
Dublin 38
São Paulo 37
Figino 30
Naples 26
Orem 23
Tokyo 21
Turku 21
Warsaw 21
Amsterdam 20
Dong Ket 20
Montreal 20
San Francisco 20
Wilmington 20
Frankfurt am Main 19
Turin 19
Andover 16
Da Nang 16
Atlanta 15
Chennai 15
Ann Arbor 14
Baghdad 14
Denver 14
Haiphong 14
Lappeenranta 13
Manchester 13
Brooklyn 12
Houston 12
Izmir 12
Mexico City 12
Poplar 12
Pune 12
Columbus 11
L’Aquila 11
Sennori 11
Phoenix 10
Sarno 10
Stockholm 10
Washington 10
Baronissi 9
Bologna 9
Boston 9
Buffalo 9
Hải Dương 9
Nairobi 9
Nuremberg 9
Tashkent 9
Amman 8
Johannesburg 8
Rio de Janeiro 8
Seoul 8
Belo Horizonte 7
Domicella 7
Fairfield 7
Florence 7
New Delhi 7
Seattle 7
Toronto 7
Ancona 6
Chicago 6
Dhaka 6
Guangzhou 6
Helsinki 6
Honolulu 6
Jakarta 6
London 6
Norwalk 6
Palermo 6
Salvador 6
Woodbridge 6
Alcobendas 5
Asunción 5
Biên Hòa 5
Boardman 5
Buenos Aires 5
Cagliari 5
Caracas 5
City of London 5
Erbil 5
Totale 7.861
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Nome #
Ambipolar conduction in gated tungsten disulphide nanotube 1.032
Temperature Dependent Black Phosphorus Transistor and Memory 870
BP/MoS₂ Van Der Waals Heterojunctions for Self‐Powered Photoconduction 571
Ultrathin SnS2 Field‐Effect Transistors Exhibiting Temperature‐Enhanced Memory Performance 360
WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications 350
Multilayer WS2 for low-power visible and near-infrared phototransistors 349
Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters 319
Zinc oxide tetrapods as novel field emitters with low turn-on voltage 278
n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory 212
All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics 203
Electron field emission of water-based inkjet printed graphene films 189
Memory Effect and Coexistence of Negative and Positive Photoconductivity in Black Phosphorus Field Effect Transistor for Neuromorphic Vision Sensors 178
2D materials in field-effect transistors: effects of pressure, temperature and e-beam irradiation 168
Single WS2 Nanotube-Based Field Effect Transistor: Ambipolar Conduction and Self-Powered Photodetection 165
Molibdenum Disulfide Field Effect Transistor under Electron Beam Irradiation and External Electric Field 163
Gate-Driven Bi-Directional Photoresponse in MoTe2 Based Field Effect Transistors 150
Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures 145
Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors 138
Black phosphorus nanosheets in field effect transistors with Ni and NiCr contacts 135
Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures 133
Air Pressure, Gas Exposure and Electron Beam Irradiation of 2D Transition Metal Dichalcogenides 133
Optoelectronic memory with suspended InAs nanowire field effect transistor 129
Black phosphorus unipolar transistor, memory, and photodetector 124
Field Emission from Graphene Layers 121
Flexible Cold Cathodes Based on Graphite Nanoplatelet Coatings on Silicone Rubber 119
Field Emission Characteristics of InSb Patterned Nanowires 116
WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress 115
Characterization of InSb nanopillars for field emission applications 114
Graphene-Silicon Device for Visible and Infrared Photodetection 114
Optoelectronic memory in 2D MoS2 field effect transistor 113
SnO 2 Nanofibers Network for Cold Cathode Applications in Vacuum Nanoelectronics 113
Field Emission Characterization of MoS2 Nanoflowers 112
Field Emission in Ultrathin PdSe2 Back‐Gated Transistors 111
A Self‐Powered CNT–Si Photodetector with Tuneable Photocurrent 109
Electron irradiation on multilayer PdSe2 field effect transistors 105
Modification of contacts and channel properties in two-dimensional field-effect transistors by 10 keV electron beam irradiation 103
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 101
Characterization of the electric transport properties of black phosphorous back-gated field-effect transistors 98
Electrical conduction and photoconduction in PtSe2 ultrathin films 98
2D transition metal dichalcogenides nanosheets as gate modulated cold electron emitters 98
Electrical transport in two-dimensional PdSe2 and Mos2 nanosheets 94
n-type GaSe thin flake for optoelectronic devices 92
Electric Transport Properties In Few-Layers WTe2 Field Effect Transistors Affected by Temperature 92
Electron irradiation of metal contacts in monolayer MoS2 Field-Effect Transistors 91
Effect of PMMA capping layer on black phosphorus field effect transistor 89
Optoelectronic properties of two-dimensional α-In2Se3 Field Effect Transistor 85
Hierarchical WSe2 Nanoflowers for Efficient Field Emission 85
Direct contacting of 2D nanosheets by metallic nanoprobes 85
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors 82
Enhanced photodetection in carbon-based devices with MIS parallel structure 81
Germanium arsenide nanosheets applied as two-dimensional field emitters 80
PtSe2 phototransistors with negative photoconductivity 76
Memory effects in black phosphorus field effect transistors 73
Manipulation of the electrical and memory device properties of monolayer MoS2 field-effect transistors by highly charged ion irradiation 72
Sensors based on multiwalled carbon nanotubes 67
Vacuum Gauge from Ultrathin MoS2 Transistor 66
Multiscale Characterization of Graphene/ITO Hybrid Electrodes for Solar Cells 65
Temperature Dependence of Electrical Resistance in Graphite Films Deposited on Glass and Low-Density Polyethylene by Spray Technology 62
The Superconducting Mechanism in BiS2-Based Superconductors: A Comprehensive Review with Focus on Point-Contact Spectroscopy 62
Two-dimensional α-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory 61
Manipulation of the electrical and memory properties of MoS2 field-effect transistors by highly charged ion irradiation 60
Temperature dependence of Germanium Arsenide field-effect transistors electrical properties 60
ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode 58
Multiwalled Carbon Nanotubes Films for Sensing Purpose 57
Gate‐Controlled Field Emission Current from MoS2 Nanosheets 56
Local Characterization of Field Emission Properties of Graphene Flowers 51
Etch and Print: Graphene-Based Diodes for Silicon Technology 51
Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector 50
Ambipolar to anti-ambipolar light induced transition in WSe 2 -based FETs 49
Fully Printed Memristors Made with MoS2 and Graphene Water-Based Inks 45
Synaptic Behavior in SnSe2 Field‐Effect Transistors Induced by Surface Oxide and Trap Dynamics 43
Photogating in Suspended InAs Nanowire Field Effect Transistors for Neuromorphic Applications 30
Transition Metal Dichalcogenides and Carbon Nanomaterials in Field Effect Devices and Photodetectors 28
Interface‐Engineered MoSe2/CrOCl Complementary FETs Integrating Logic, Memory, and Neuromorphic Functions 24
Experiment and Simulation in Silicon PN-Junction Photodetectors: Insights into Electrical and Optical Transport 23
Impedance spectroscopy characterization of inkjet-printed graphene/silicon Schottky diodes 23
Defect-tuned conduction in ultrathin MoTe2 field-effect transistors 17
Positive and negative photoconductivity coexist in two-dimensional ternary SnSSe alloy 13
Mimicking Pavlovian Conditioning with WSe2 Phototransistors 8
Totale 10.660
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Categoria #
all - tutte 28.847
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.847
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022203 0 10 0 26 19 7 6 6 15 9 21 84
2022/2023429 30 50 4 55 48 72 15 62 60 12 17 4
2023/2024331 16 29 15 16 32 63 26 13 8 17 38 58
2024/20251.021 19 19 11 39 34 109 257 98 91 67 111 166
2025/20268.131 1.421 1.929 1.496 511 461 266 517 135 330 428 152 485
2026/2027377 214 163 0 0 0 0 0 0 0 0 0 0
Totale 10.660